Samsung with a total investment of 7 billion US dollars accelerates the construction of Xian NAND flash memory plant

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 Samsung with a total investment of 7 billion US dollars accelerates the construction of Xian NAND flash memory plant


After seven consecutive quarters of decline, NAND flash market will turn around at the end of this year. The decline of flash price in Q3 quarter has narrowed sharply, and Q4 quarter is expected to rise from decline to increase by about 10%.

While prices are changing, upstream flash manufacturers are beginning to take new steps. Korean media reports that Samsung plans to increase its memory chip expenditure to $6.5 billion next year. The additional funds are mainly used to build the second phase of the flash factory in Xian, China.

In Xian, China, Samsung invested $7 billion to build the first phase of flash memory plant in 2014, mainly producing the first generation of V-NAND flash memory chips. In 2017, Samsung signed a new agreement with the Xian government to invest another $7 billion to build a second flash memory plant by 2020.

But in 2017, the flash market was still bullish. Prices have risen for more than a year. After the price of flash memory declined in 2018 and 2019, the speed of Samsungs construction of Xian factories has slowed down. Now accelerating the construction of new factories, in fact, because the flash memory market is about to usher in a turning point, in 2020 is generally favored, Samsung large-scale construction of new factories, will help to seize a higher share.

Source: Responsible Editor of Fast Technology: Yao Liwei_NT6056