In this field, China ushered in the key battle to break the monopoly of the United States, Japan and South Korea.

 In this field, China ushered in the key battle to break the monopoly of the United States, Japan and South Korea.

The so-called 3D NAND is by stacking the original flat storage units, forming a multi-layer structure to provide capacity, so that the original only layer of storage units stacked into 64 or more layers.

Shorten product marketing cycle

The report points out that the 64-layer three-dimensional flash memory of Yangtze River Storage is the worlds first flash product based on Xtacking architecture, which has the highest storage density of contemporary products. Innovative Xtacking technology can bond two wafers through billions of vertical interconnection channels (VIA) in one processing step. Compared with traditional three-dimensional flash memory architecture, it can bring faster transmission speed, higher storage density and shorter product launch cycle.

Diao Shijing, co-president of Ziguang Group, said that before Changjiang Storage entered this field, there had been no large-scale memory chip production in China. In the future, with the development of cloud computing and big data, the requirement for data storage is becoming higher and higher. Three-dimensional flash memory chip is an important field of high-end chips, and its quantity is high. Production also marks a significant step closer to the international advanced level, which has shortened the level of Chinese products to a generation of overseas advanced level.

Sixty thousand wafers a month will be produced by the end of next year

Reported that the memory chip competition is fierce, Samsung, Hailishi, Toshiba, Western Data, Meguiar, Intel and other giants continue to invest in capacity. In 2018, 64-layer and 72-layer 3D NAND flash memory is already the main product. In 2019, 92-layer and 96-layer products will be produced. By 2020, large factories will enter 128-layer 3D NAND flash production.

According to industry analysis, Yangtze storage is developing rapidly, but at present it is conservative. Although its production scale has not been announced, it is expected to increase its production capacity to the level of 60,000 wafers per month by the end of 2020.

It is reported that the production of 64-layer three-dimensional flash memory products in the Yangtze River is expected to increase the self-productivity of memory chips from 8% to 40%. Under the monopoly of American, Japanese and Korean factories, the news of 64 3D DNA ND flash production stored in the Yangtze River is of special significance.

The industry predicts that Changjiang Storage will jump over 96 storeys and directly enter 128 storeys of three-dimensional flash memory as soon as next year to achieve overtaking in bends. It is reported that Yangtze Storage has launched the Xtacking 2.0 plan to improve the throughput rate of NAND, enhance the comprehensive performance of system-level storage, and open a new business model of customized NAND. The related products will be widely used in data centers, enterprise servers, personal computers and mobile devices.